| ‘? 1N3611GP, 1N3612GP, 1N3613GP,1N3614GP,1N3957GP7 WWw'ViShay'C°m Vishay General Semiconductor T00 T00 10 01 instantaneous FonNard Current (A) Junction Capacitance (pF) 3 III Illliiiiillliiiii 1 1 0 l U U, "2 1 . 0 1 100 Instantaneous Forward Voltage (V) Reverse Voltage (V) Fig. 3 - Typical Instantaneous FonNard Characteristics Fig. 5 - Typical Junction Capacitance 10 100 10 on instantaneous Reverse Current (DA) Transient Thermal impedance (“C/W) Percent of Rated Peak Reverse Voltage (%) t - Pulse Duration (s) Fig. 4 - Typical Reverse Characteristics Fig. 6 - Typical Transient Thermal Impedance PACKAGE ouTLINE DIMENSIONS in inches (millimeters) Do-2o4AL (Do-41)71.0 (25 4) MW. 0.107 (2.7) 0.080 (2.0) DlA. ‘>‘ 0.205 (5.2) 0.180 14.1) 1.0 (25 4) MW. 0.034 (0.86) 0.028 (0.71) Note . 0.026 (0.66) DIA- - Lead diameter Is 0023 (0-58) for suffix “E" part numbers Revision: 11-Dec-13 3 Document Number: 88502 For technical questions within your region: DiodesArnericas@vishay.c0m, DiodesAsia@vishay.com, DiodesEurcpe@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.visnay.com/doc?91000 |